IXTA08N100D2-TRL

Specifications

Typical Fall Time Ns

48

Category

Power MOSFET

Maximum Operating Temperature C

150

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Package Height

4.7(Max)

Technology

Si

Typical Rise Time Ns

57

Ppap

No

Kılıf / Paket

TO-263AA-3

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

325@25V

Maximum Drain Source Resistance Mohm

21000@0V

Typical Turnoff Delay Time Ns

34

Parça Durumu

Active

Ambalaj

Tape and Reel

Qg Gate Charge

14.6 nC

Montaj Stili

SMD/SMT

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

1 kV

Rds On Drainsource Resistance

21 Ohms

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Drain Source Voltage V

1000

Typical Turnon Delay Time Ns

28

Supplier Package

D2PAK

Package Width

9.4(Max)

Maximum Continuous Drain Current A

0.8(Min)

Typical Gate Charge Vgs Nc

14.6@5V

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.40

Pd Power Dissipation

60 W

Automotive

No

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2 V

Id Continuous Drain Current

800 mA