IXTA08N100D2HV

Specifications

Pd Power Dissipation

60 W

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

14.6@5V

Automotive

No

Typical Turnon Delay Time Ns

28

Supplier Package

TO-263HV

Package Width

9.4(Max)

Continuous Drain Current Id

800mA

Maximum Power Dissipation Mw

60000

Channel Mode

Enhancement

Number Of Channels

1 Channel

Maximum Gate Source Voltage V

±20

Tab

Tab

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4 V

Package Length

10.2(Max)

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

800 mA

Power Dissipation

60W

Configuration

Single

Technology

Si

Typical Rise Time Ns

57

Ppap

No

Kılıf / Paket

TO-263HV-3

Typical Input Capacitance Vds Pf

325@25V

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Fall Time Ns

48

Maximum Operating Temperature C

150

Category

Power MOSFET

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Package Height

4.7(Max)

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

1 kV

Mounting

Surface Mount

Number Of Elements Per Chip

1