IXTA02N250HV-TRL

Specifications

Package Length

10.2(Max)

Typical Output Capacitance Pf

8

Typical Reverse Recovery Time Ns

1500

Configuration

Single

Channel Mode

Enhancement

Maximum Power Dissipation Mw

83000

Tab

Tab

Maximum Positive Gate Source Voltage V

20

Maximum Gate Source Voltage V

±20

Typical Gate Plateau Voltage V

6

Supplier Package

TO-263ABVHV

Typical Turnon Delay Time Ns

19

Package Width

9.4(Max)

Maximum Continuous Drain Current A

0.2

Maximum Gate Threshold Voltage V

4.5

Automotive

No

Typical Gate Charge Vgs Nc

7.4@10V

Hts

8541.29.00.95

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

450000@10V

Typical Turnoff Delay Time Ns

32

Maximum Idss Ua

5

Ambalaj

Tape and Reel

Maximum Pulsed Drain Current Tc25c A

0.6

Typical Gate Charge10v Nc

7.4

Eccn Us

EAR99

Maximum Diode Forward Voltage V

2

Minimum Gate Threshold Voltage V

2.5

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

2500

Mounting

Surface Mount

Number Of Elements Per Chip

1

Operating Junction Temperature C

150

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

33

Typical Gate To Drain Charge Nc

5.3

Package Height

4.7(Max)

Typical Reverse Transfer Capacitance Vds Pf

3@25V

Eu Rohs

Compliant