IXTA02N250HV

Specifications

Automotive

No

Maximum Gate Threshold Voltage V

4.5

Maximum Continuous Drain Current A

0.2

Package Width

9.4(Max)

Typical Turnon Delay Time Ns

19

Supplier Package

TO-263ABVHV

Lead Shape

Gull-wing

Maximum Gate Source Voltage V

±20

Maximum Positive Gate Source Voltage V

20

Tab

Tab

Continuous Drain Current Id

200mA

Maximum Power Dissipation Mw

83000

Channel Mode

Enhancement

Typical Reverse Recovery Time Ns

1500

Typical Output Capacitance Pf

8

Package Length

10.2(Max)

Typical Input Capacitance Vds Pf

116@25V

Typical Gate To Source Charge Nc

0.7

Technology

Si

Ppap

No

Channel Type

N

Pin Sayısı

3

Typical Reverse Transfer Capacitance Vds Pf

3@25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

450 Ohms

Minimum Gate Threshold Voltage V

2.5

Maximum Diode Forward Voltage V

2

Typical Gate Charge10v Nc

7.4

Svhc

Yes

Vds Drainsource Breakdown Voltage

2.5 kV

Maximum Idss Ua

5

Maximum Drain Source Resistance Mohm

450000@10V

Parça Durumu

Active

Pd Power Dissipation

83 W

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

7.4@10V