Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Switching Energy
- 800μJ (on), 450μJ (off)
- Jesd30 Code
- R-PSIP-T3
- Transistor Application
- POWER CONTROL
- Current Collector Pulsed Icm
- 260A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maximum Power Dissipation Mw
- 170
- Ppap
- No
- Package Length
- 16.13(Max)
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Td Onoff25c
- 21ns/70ns
- Gateemitter Voltagemax
- 20V
- Maximum Continuous Collector Current A
- 75
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Maximum Gate Emitter Leakage Current Ua
- 0.1
- Automotive
- No
- Configuration
- Single
- REACH Uyumluluk Kodu
- unknown
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 170W
- Channel Type
- N
- Fabrika Tedarik Süresi
- 30 Weeks
- Number Of Elements
- 1
- Gateemitter Thr Voltagemax
- 5V
- Collector Emitter Voltage Vceo
- 2.5V
- Maximum Gate Emitter Voltage V
- ±20
- Maximum Collectoremitter Voltage V
- 600
- Turn On Time
- 54 ns
- Terminal Kaplaması
- TIN SILVER COPPER
- Case Connection
- ISOLATED
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 2.5V @ 15V, 40A
- Yayın Yılı
- 2010
- Igbt Type
- PT
- Mounting
- Through Hole
- Tab
- Tab
- Reverse Recovery Time
- 25 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collectoremitter Saturation Voltage
- 2.5V
- Qualification Status
- Not Qualified
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