Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Maximum Collectoremitter Voltage V
- 1200
- Maximum Gate Emitter Voltage V
- ±20
- Turn On Time
- 54 ns
- Collector Emitter Voltage Vceo Max
- 1.2 kV
- Collector Emitter Voltage Vceo
- 4.2V
- Yayın Yılı
- 2008
- Vceon Max Vge Ic
- 4.2V @ 15V, 20A
- Kurşunsuz Kodu
- yes
- Pd Power Dissipation
- 200 W
- Case Connection
- ISOLATED
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Igbt Type
- PT
- Technology
- Si
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Qualification Status
- Not Qualified
- Mounting
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reverse Recovery Time
- 220 ns
- Collectoremitter Saturation Voltage
- 3.6 V
- Tab
- Tab
- Ppap
- No
- Maximum Power Dissipation Mw
- 200
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Package Length
- 16.13(Max)
- Switching Energy
- 1.37mJ (on), 470μJ (off)
- Current Collector Pulsed Icm
- 96A
- Transistor Application
- POWER CONTROL
- Maximum Continuous Collector Current A
- 48
- Transistor Element Material
- SILICON
- Maks. Çalışma Sıcaklığı
- + 150 C
- Td Onoff25c
- 16ns/93ns
- Terminal Sayısı
- 3
- Configuration
- Single
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 200W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Maximum Gate Emitter Leakage Current Ua
- 0.1
- Automotive
- No
- Channel Type
- N
- Number Of Elements
- 1
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