IXGH32N170A

Specifications

Transistor Element Material

SILICON

Parça Durumu

Active

Ppap

No

Automotive

No

Eu Rohs

Compliant with Exemption

Switching Energy

1.5mJ (off)

Turn On Time

107 ns

Voltage Collector Emitter Breakdown Max

1700V

Jedec95 Code

TO-247AD

Collector Emitter Voltage Vceo

1.7kV

Current Collector Pulsed Icm

110A

Mounting

Through Hole

Element Configuration

Single

Td Onoff25c

46ns/260ns

Package Width

5.3(Max)

Package Length

16.26(Max)

Kılıf / Paket

TO-247-3

Maximum Gate Emitter Leakage Current Ua

0.1

Montaj Tipi

Through Hole

Pcb Changed

3

Svhc Exceeds Threshold

Yes

Maximum Collectoremitter Voltage V

1700

Channel Type

N

Pin Sayısı

3

Supplier Package

TO-247AD

Terminal Sayısı

3

Turn Off Timenom Toff

370 ns

Temel Parça No

IXG*32N170

Max Power Dissipation

350W

Maximum Operating Temperature C

150

Giriş Tipi

Standard

Gate Charge

155nC

Max Collector Current

32A

Power Dissipation

350W

Package Height

21.46(Max)

Minimum Operating Temperature C

-55

Akım Değeri

75A

Number Of Elements

1

Maximum Power Dissipation Mw

350

Hts

8541.10.00.80