Volume pricing
- 1+ pcs$89.59
- 10+ pcs$84.51
- 100+ pcs$79.73
- 500+ pcs$75.22
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Lead Shape
- Through Hole
- Fabrika Tedarik Süresi
- 8 Weeks
- Kılıf / Paket
- i4-Pac™-5 (3 Leads)
- Maximum Gate Emitter Leakage Current Ua
- 0.2
- Package Width
- 5.21(Max)
- Giriş Tipi
- Standard
- Collectoremitter Breakdown Voltage
- 4kV
- Maximum Continuous Collector Current A
- 30
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2009
- Minimum Operating Temperature C
- -55
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number Of Elements
- 1
- Case Connection
- ISOLATED
- Transistor Application
- GENERAL PURPOSE SWITCHING
- Terminal Sayısı
- 3
- Gate Charge
- 135nC
- Typical Collector Emitter Saturation Voltage V
- 5.2(Max)
- Parça Durumu
- NRND
- Max Collector Current
- 30A
- Pin Sayısı
- 3
- Maximum Gate Emitter Voltage V
- ±20
- Hts
- 8541.59.00.80
- Gateemitter Voltagemax
- 20V
- Power Max
- 160W
- Mounting
- Through Hole
- Maximum Collectoremitter Voltage V
- 4000
- Eccn Us
- EAR99
- Vceon Max Vge Ic
- 5.2V @ 15V, 90A
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e1
- Polaritychannel Type
- N-CHANNEL
- Maximum Power Dissipation Mw
- 160
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Maximum Operating Temperature C
- 150
- Element Configuration
- Single
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