IXFZ140N25T

Specifications

Channel Mode

Enhancement

Maximum Continuous Drain Current A

100

Maximum Drain Source Resistance Mohm

17@10V

Typical Gate Charge Vgs Nc

255@10V

Pcb Changed

6

Configuration

Single

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

19@25V

Maximum Power Dissipation Mw

445000

Number Of Elements Per Chip

1

Maximum Idss Ua

50

Maximum Drain Source Voltage V

250

Package Width

23.11

Package Height

3.18

Maximum Operating Temperature C

150

Mounting

Surface Mount

Typical Rise Time Ns

29

Package Length

21.08

Typical Fall Time Ns

22

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

33

Maximum Gate Source Leakage Current Na

200

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

Case DE-475

Ppap

No

Typical Gate Charge10v Nc

255

Typical Turnoff Delay Time Ns

92

Pin Sayısı

6

Maximum Gate Source Voltage V

±20

Parça Durumu

Active

Automotive

No