IXFY8N65X2

Specifications

Typical Turnoff Delay Time Ns

29

Maximum Operating Temperature C

150

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

11

Maximum Drain Source Voltage V

650

Typical Input Capacitance Vds Pf

790@25V

Maximum Power Dissipation Mw

150000

Number Of Elements Per Chip

1

Ppap

No

Channel Type

N

Minimum Operating Temperature C

-55

Category

Power MOSFET

Eccn Us

EAR99

Typical Rise Time Ns

11

Maximum Drain Source Resistance Mohm

450@10V

Typical Gate Charge Vgs Nc

11@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

8

Typical Turnon Delay Time Ns

17

Configuration

Single

Typical Fall Time Ns

15

Eu Rohs

Compliant