IXFY36N20X3

Specifications

Ppap

No

Typical Gate Charge10v Nc

21

Vgs Th Gatesource Threshold Voltage

2.5 V

Power Dissipation

170W

Typical Turnoff Delay Time Ns

54

Qg Gate Charge

21 nC

Automotive

No

Typical Rise Time Ns

30

Package Length

6.73(Max)

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant

Tab

Tab

Channel Type

N

Rds On Drainsource Resistance

38 mOhms

Supplier Package

TO-252AA

Number Of Channels

1 Channel

Typical Input Capacitance Vds Pf

1425@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

170000

Maks. Çalışma Sıcaklığı

+ 150 C

Package Height

2.38(Max)

Maximum Operating Temperature C

150

Id Continuous Drain Current

36 A

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

21@10V

Maximum Drain Source Resistance Mohm

45@10V

Pcb Changed

2

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Hts

8541.29.00.95

Pin Sayısı

3

Maximum Gate Source Voltage V

±20

Continuous Drain Current Id

36A

Parça Durumu

Active

Transistor Polarity

N-Channel

Mounting

Surface Mount

Typical Fall Time Ns

20

Typical Turnon Delay Time Ns

19

Eccn Us

EAR99

Category

Power MOSFET