IXFX64N60Q3

Specifications

Pd Power Dissipation

1.25 kW

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

64 A

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Seri

IXFX64N60

Package Width

5.21(Max)

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

600

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1250000

Typical Input Capacitance Vds Pf

9930@25V

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Typical Gate Charge Vgs Nc

190@10V

Maximum Drain Source Resistance Mohm

95@10V

Maximum Continuous Drain Current A

64

Channel Mode

Enhancement

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Gate Source Voltage V

±30

Svhc

Yes

Pin Sayısı

3

Qg Gate Charge

190 nC

Typical Turnoff Delay Time Ns

50

Typical Gate Charge10v Nc

190

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Supplier Package

PLUS 247

Number Of Channels

1 Channel

Category

Power MOSFET

Technology

Si

Rds On Drainsource Resistance

95 mOhms

Channel Type

N

Process Technology

HiperFET

Tab

Tab

Typical Turnon Delay Time Ns

45