IXFX55N50F

Specifications

Typical Gate Charge Vgs Nc

195@10V

Maximum Drain Source Resistance Mohm

85@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

55

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

6700@25V

Maximum Power Dissipation Mw

560000

Number Of Elements Per Chip

1

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Typical Rise Time Ns

20

Package Length

16.13(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

24

Tab

Tab

Typical Fall Time Ns

9.6

Eu Rohs

Compliant

Channel Type

N

Supplier Package

PLUS 247

Category

Power MOSFET

Eccn Us

EAR99

Typical Gate Charge10v Nc

195

Ppap

No

Typical Turnoff Delay Time Ns

45

Pin Sayısı

3

Material

Si

Standard Package Name

PLUS 247

Parça Durumu

Obsolete

Automotive

No

Maximum Gate Source Voltage V

±20