IXFX520N075T2

Specifications

Process Technology

HiperFET

Channel Type

N

Supplier Package

PLUS 247

Eccn Us

EAR99

Category

Power MOSFET

Typical Rise Time Ns

36

Package Length

16.13(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

48

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

35

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

80

Pin Sayısı

3

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Svhc

Yes

Typical Gate Charge10v Nc

545

Ppap

No

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

2.2@10V

Typical Gate Charge Vgs Nc

545@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

520

Pcb Changed

3

Configuration

Single

Package Height

21.34(Max)

Maximum Operating Temperature C

175

Package Width

5.21(Max)

Maximum Drain Source Voltage V

75

Typical Input Capacitance Vds Pf

41000@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1250000