IXFX48N50Q

Specifications

Typical Gate Charge Vgs Nc

190@10V

Maximum Drain Source Resistance Mohm

100@10V

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Id Continuous Drain Current

48 A

Maximum Power Dissipation Mw

500000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

7000@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Rds On Drainsource Resistance

100 mOhms

Process Technology

HiperFET

Channel Type

N

Supplier Package

PLUS 247

Number Of Channels

1 Channel

Typical Rise Time Ns

22

Package Length

16.13(Max)

Tab

Tab

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

500 V

Typical Turnoff Delay Time Ns

75

Automotive

No

Typical Gate Charge10v Nc

190

Ppap

No

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

48

Seri

IXFX48N50

Package Width

5.21(Max)

Pd Power Dissipation

500 W

Kılıf / Paket

TO-247-3

Maximum Drain Source Voltage V

500

Montaj Stili

Through Hole

Technology

Si

Eccn Us

EAR99

Category

Power MOSFET

Mounting

Through Hole

Typical Turnon Delay Time Ns

33