IXFX44N80Q3

Specifications

Kılıf / Paket

TO-247-3

Pd Power Dissipation

1.25 kW

Id Continuous Drain Current

44 A

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

800

Typical Input Capacitance Vds Pf

10950@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1250000

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

190@10V

Typical Gate Charge Vgs Nc

185@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

44

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Gate Source Voltage V

±30

Svhc

Yes

Qg Gate Charge

185 nC

Typical Turnoff Delay Time Ns

63

Pin Sayısı

3

Typical Gate Charge10v Nc

185

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Supplier Package

PLUS 247

Number Of Channels

1 Channel

Technology

Si

Category

Power MOSFET

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

190 mOhms

Typical Turnon Delay Time Ns

45

Tab

Tab

Vds Drainsource Breakdown Voltage

800 V