IXFX44N80P

Specifications

Maximum Continuous Drain Current A

44

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

198@10V

Maximum Drain Source Resistance Mohm

190@10V

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

1040000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1200@25V

Maximum Drain Source Voltage V

800

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Mounting

Through Hole

Typical Rise Time Ns

22

Package Length

16.13(Max)

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

27

Tab

Tab

Typical Turnon Delay Time Ns

28

Process Technology

HiperFET

Channel Type

N

Category

Power MOSFET

Supplier Package

PLUS 247

Ppap

No

Typical Gate Charge10v Nc

198

Pin Sayısı

3

Typical Turnoff Delay Time Ns

75

Hts

8541.29.00.95

Svhc

Yes

Maximum Gate Source Voltage V

±30

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active