IXFX34N80

Specifications

Typical Rise Time Ns

45

Package Length

16.13(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

45

Tab

Tab

Vds Drainsource Breakdown Voltage

800 V

Typical Fall Time Ns

40

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

240 mOhms

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Technology

Si

Category

Power MOSFET

Typical Gate Charge10v Nc

270

Ppap

No

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Turnoff Delay Time Ns

100

Material

Si

Pin Sayısı

3

Parça Durumu

NRND

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Svhc

Yes

Maximum Gate Source Voltage V

±20

Maximum Drain Source Resistance Mohm

240@10V

Typical Gate Charge Vgs Nc

270@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

34

Minimum Operating Temperature

- 55 C

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

800

Typical Input Capacitance Vds Pf

7500@25V

Maximum Power Dissipation Mw

560000

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 150 C