IXFX32N80Q3

Specifications

Maximum Drain Source Voltage V

800

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1000000

Typical Input Capacitance Vds Pf

6940@25V

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Resistance Mohm

270@10V

Typical Gate Charge Vgs Nc

140@10V

Maximum Continuous Drain Current A

32

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

140

Ppap

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

45

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Package Length

16.13(Max)

Typical Rise Time Ns

13

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

38

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

10

Channel Type

N

Process Technology

HiperFET

Supplier Package

PLUS 247

Category

Power MOSFET