IXFX32N100Q3

Specifications

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Supplier Package

PLUS 247

Mounting

Through Hole

Typical Rise Time Ns

15

Package Length

16.13(Max)

Typical Fall Time Ns

12

Eu Rohs

Compliant with Exemption

Tab

Tab

Typical Turnon Delay Time Ns

45

Pin Sayısı

3

Typical Turnoff Delay Time Ns

54

Hts

8541.29.00.95

Svhc

Yes

Maximum Gate Source Voltage V

±30

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Ppap

No

Typical Gate Charge10v Nc

195

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

32

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

195@10V

Maximum Drain Source Resistance Mohm

320@10V

Configuration

Single

Pcb Changed

3

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Maximum Power Dissipation Mw

1250000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

10990@25V

Maximum Drain Source Voltage V

1000