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Technical team support
Specifications
- Typical Input Capacitance Vds Pf
- 45@25V
- Maximum Power Dissipation Mw
- 1670000
- Number Of Elements Per Chip
- 1
- Maximum Drain Source Voltage V
- 170
- Package Width
- 5.21(Max)
- Package Height
- 21.34(Max)
- Maximum Operating Temperature C
- 175
- Pcb Changed
- 3
- Configuration
- Single
- Channel Mode
- Enhancement
- Maximum Continuous Drain Current A
- 320
- Maximum Drain Source Resistance Mohm
- 5.2@10V
- Typical Gate Charge Vgs Nc
- 640@10V
- Minimum Operating Temperature C
- -55
- Ppap
- No
- Typical Gate Charge10v Nc
- 640
- Svhc
- Yes
- Maximum Gate Source Voltage V
- ±20
- Automotive
- No
- Svhc Exceeds Threshold
- Yes
- Parça Durumu
- Active
- Typical Turnoff Delay Time Ns
- 115
- Hts
- 8541.29.00.95
- Pin Sayısı
- 3
- Eu Rohs
- Compliant with Exemption
- Typical Fall Time Ns
- 230
- Typical Turnon Delay Time Ns
- 46
- Tab
- Tab
- Mounting
- Through Hole
- Package Length
- 16.13(Max)
- Typical Rise Time Ns
- 170
- Category
- Power MOSFET
- Eccn Us
- EAR99
- Supplier Package
- PLUS 247
- Channel Type
- N
- Process Technology
- GigaMOS
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