IXFX30N100Q2

Specifications

Vgs Gatesource Voltage

- 30 V, + 30 V

Parça Durumu

NRND

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Maximum Gate Source Voltage V

±30

Svhc

Yes

Hts

8541.21.00.95

Pin Sayısı

3

Typical Turnon Delay Time Ns

22

Typical Fall Time Ns

10

Mounting

Through Hole

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

1000

Kılıf / Paket

TO-247-3

Pd Power Dissipation

735 W

Seri

IXFX30N100

Package Width

5.21(Max)

Maximum Continuous Drain Current A

30

Minimum Operating Temperature

- 55 C

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

186

Ppap

No

Automotive

No

Typical Turnoff Delay Time Ns

60

Tab

Tab

Vds Drainsource Breakdown Voltage

1 kV

Eu Rohs

Compliant with Exemption

Package Length

16.13(Max)

Typical Rise Time Ns

14

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

400 mOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

8200@25V

Maximum Power Dissipation Mw

735000