IXFX27N80Q

Specifications

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Voltage V

800

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

500000

Typical Input Capacitance Vds Pf

7600@25V

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Typical Gate Charge Vgs Nc

170@10V

Maximum Drain Source Resistance Mohm

320@10V

Maximum Continuous Drain Current A

27

Channel Mode

Enhancement

Parça Durumu

NRND

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Gate Source Voltage V

±20

Svhc

Yes

Pin Sayısı

3

Typical Turnoff Delay Time Ns

50

Typical Gate Charge10v Nc

170

Ppap

No

Supplier Package

PLUS 247

Category

Power MOSFET

Process Technology

HiperFET

Channel Type

N

Tab

Tab

Typical Turnon Delay Time Ns

20

Typical Fall Time Ns

13

Eu Rohs

Compliant with Exemption

Package Length

16.13(Max)

Typical Rise Time Ns

28

Mounting

Through Hole