IXFX26N120P

Specifications

Maximum Drain Source Voltage V

1200

Typical Input Capacitance Vds Pf

14000@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

960000

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

500@10V

Typical Gate Charge Vgs Nc

255@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

26

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

255

Ppap

No

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Typical Turnoff Delay Time Ns

76

Pin Sayısı

3

Typical Turnon Delay Time Ns

56

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

58

Package Length

16.13(Max)

Typical Rise Time Ns

55

Mounting

Through Hole

Supplier Package

PLUS 247

Category

Power MOSFET

Channel Type

N

Process Technology

HiperFET