IXFX26N100P

Specifications

Vds Drainsource Breakdown Voltage

1 kV

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

50

Typical Turnon Delay Time Ns

45

Tab

Tab

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

45

Technology

Si

Category

Power MOSFET

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

390 mOhms

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Typical Gate Charge10v Nc

197

Maximum Gate Source Voltage V

±30

Svhc

Yes

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Typical Turnoff Delay Time Ns

72

Pin Sayısı

3

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

20

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

197@10V

Maximum Drain Source Resistance Mohm

390@10V

Minimum Operating Temperature C

-55

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

11900@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

780000

Maximum Drain Source Voltage V

1000