IXFX250N10P

Specifications

Typical Gate Charge Vgs Nc

205@10V

Maximum Drain Source Resistance Mohm

6.5@10V

Channel Mode

Enhancement

Pcb Changed

3

Configuration

Single

Package Height

21.34(Max)

Maximum Operating Temperature C

175

Id Continuous Drain Current

250 A

Typical Input Capacitance Vds Pf

16000@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1250000

Maks. Çalışma Sıcaklığı

+ 175 C

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

6.5 mOhms

Supplier Package

PLUS 247

Number Of Channels

1 Channel

Package Length

16.13(Max)

Typical Rise Time Ns

30

Tab

Tab

Vds Drainsource Breakdown Voltage

100 V

Eu Rohs

Compliant with Exemption

Qg Gate Charge

205 nC

Typical Turnoff Delay Time Ns

50

Automotive

No

Typical Gate Charge10v Nc

205

Ppap

No

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

250

Seri

IXFX250N10

Package Width

5.21(Max)

Kılıf / Paket

TO-247-3

Pd Power Dissipation

1.25 mW

Maximum Drain Source Voltage V

100

Montaj Stili

Through Hole

Category

Power MOSFET

Technology

Si

Mounting

Through Hole