IXFX240N25X3

Specifications

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

5@10V

Typical Gate Charge Vgs Nc

345@10V

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

23800@25V

Maximum Power Dissipation Mw

1250000

Number Of Elements Per Chip

1

Id Continuous Drain Current

240 A

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Tab

Tab

Vds Drainsource Breakdown Voltage

250 V

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

32

Package Length

16.13(Max)

Supplier Package

PLUS 247

Number Of Channels

1 Channel

Channel Type

N

Rds On Drainsource Resistance

5 mOhms

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Gate Charge10v Nc

345

Typical Turnoff Delay Time Ns

180

Qg Gate Charge

345 nC

Power Dissipation

1.25kW

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

240

Minimum Operating Temperature C

-55

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

250

Kılıf / Paket

PLUS-247-3

Pd Power Dissipation

1.25 mW

Package Width

5.21(Max)

Typical Turnon Delay Time Ns

36

Typical Fall Time Ns

14

Mounting

Through Hole

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si