IXFX20N120P

Specifications

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

1.2 kV

Tab

Tab

Package Length

16.13(Max)

Typical Rise Time Ns

45

Number Of Channels

1 Channel

Supplier Package

PLUS 247

Rds On Drainsource Resistance

570 mOhms

Process Technology

HiperFET

Channel Type

N

Vgs Th Gatesource Threshold Voltage

3.5 V

Ppap

No

Typical Gate Charge10v Nc

193

Automotive

No

Typical Turnoff Delay Time Ns

72

Qg Gate Charge

193 nC

Configuration

Single

Pcb Changed

3

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

193@10V

Maximum Drain Source Resistance Mohm

570@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Power Dissipation Mw

780000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

11100@25V

Id Continuous Drain Current

20 A

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Typical Fall Time Ns

70

Typical Turnon Delay Time Ns

49

Mounting

Through Hole

Technology

Si

Category

Power MOSFET

Vgs Gatesource Voltage

- 30 V, + 30 V

Maximum Gate Source Voltage V

±30

Svhc

Yes

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Pin Sayısı

3