IXFX180N10

Specifications

Maximum Drain Source Voltage V

100

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

560000

Typical Input Capacitance Vds Pf

9100@25V

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Configuration

Single

Pcb Changed

3

Typical Gate Charge Vgs Nc

360@10V

Maximum Drain Source Resistance Mohm

8@10V

Maximum Continuous Drain Current A

180

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

360

Ppap

No

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

NRND

Svhc

Yes

Maximum Gate Source Voltage V

±20

Pin Sayısı

3

Typical Turnoff Delay Time Ns

140

Hts

8541.59.00.80

Tab

Tab

Typical Turnon Delay Time Ns

50

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

65

Package Length

16.13(Max)

Typical Rise Time Ns

90

Mounting

Through Hole

Supplier Package

PLUS 247

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

HiperFET