IXFX170N20T

Specifications

Mounting

Through Hole

Typical Rise Time Ns

28

Package Length

16.13(Max)

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

22

Tab

Tab

Typical Turnon Delay Time Ns

33

Process Technology

GigaMOS

Channel Type

N

Category

Power MOSFET

Supplier Package

PLUS 247

Ppap

No

Typical Gate Charge10v Nc

265

Pin Sayısı

3

Typical Turnoff Delay Time Ns

80

Maximum Gate Source Voltage V

±20

Svhc

Yes

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Continuous Drain Current A

170

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

11@10V

Typical Gate Charge Vgs Nc

265@10V

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1150000

Typical Input Capacitance Vds Pf

19600@25V

Maximum Drain Source Voltage V

200

Package Width

5.21(Max)

Maximum Operating Temperature C

175

Package Height

21.34(Max)