IXFX120N30T

Specifications

Pin Sayısı

3

Typical Turnoff Delay Time Ns

87

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Svhc

Yes

Maximum Gate Source Voltage V

±20

Typical Gate Charge10v Nc

265

Ppap

No

Channel Type

N

Process Technology

GigaMOS

Maximum Gate Source Leakage Current Na

200

Supplier Package

PLUS 247

Category

Power MOSFET

Package Length

16.13(Max)

Typical Rise Time Ns

31

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

32

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

23

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Supplier Temperature Grade

Automotive

Maximum Idss Ua

50

Maximum Drain Source Voltage V

300

Maximum Power Dissipation Mw

960000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

20000@25V

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

265@10V

Maximum Drain Source Resistance Mohm

24@10V

Maximum Continuous Drain Current A

120

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3