IXFX120N30P3

Specifications

Category

Power MOSFET

Supplier Package

PLUS 247

Maximum Gate Source Leakage Current Na

200

Channel Type

N

Process Technology

HiperFET

Typical Fall Time Ns

11

Eu Rohs

Compliant with Exemption

Tab

Tab

Typical Turnon Delay Time Ns

26

Mounting

Through Hole

Typical Rise Time Ns

13

Package Length

16.13(Max)

Maximum Gate Source Voltage V

±20

Svhc

Yes

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

60

Ppap

No

Typical Gate Charge10v Nc

150

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

120

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

27@10V

Typical Gate Charge Vgs Nc

150@10V

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Maximum Power Dissipation Mw

1130000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

8630@25V

Maximum Drain Source Voltage V

300

Maximum Idss Ua

25