IXFX100N65X2

Specifications

Typical Input Capacitance Vds Pf

10800@25V

Maximum Power Dissipation Mw

1040000

Number Of Elements Per Chip

1

Maximum Idss Ua

50

Maximum Drain Source Voltage V

650

Package Width

5.21(Max)

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

100

Maximum Drain Source Resistance Mohm

30@10V

Typical Gate Charge Vgs Nc

183@10V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Ppap

No

Typical Gate Charge10v Nc

183

Maximum Gate Source Voltage V

±30

Svhc

Yes

Continuous Drain Current Id

100A

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Power Dissipation

1.04kW

Typical Turnoff Delay Time Ns

90

Pin Sayısı

3

Typical Fall Time Ns

13

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

37

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

26

Package Length

16.13(Max)

Category

Power MOSFET

Supplier Package

PLUS 247

Maximum Gate Source Leakage Current Na

100

Channel Type

N