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Specifications
- Maximum Continuous Drain Current A
- 96
- Channel Mode
- Enhancement
- Drainsource Onvolt
- 200(V)
- Typical Gate Charge Vgs Nc
- 145@10V
- Maximum Drain Source Resistance Mohm
- 24@10V
- Operating Temp Range
- -55C to 175C
- Configuration
- Single
- Continuous Drain Current
- 96(A)
- Pcb Changed
- 2
- Number Of Elements
- 1
- Operating Temperature Classification
- Military
- Gatesource Voltage Max
- ±20(V)
- Polarity
- N
- Minimum Operating Temperature C
- -55
- Number Of Elements Per Chip
- 1
- Maximum Power Dissipation Mw
- 600000
- Typical Input Capacitance Vds Pf
- 4800@25V
- Maximum Drain Source Voltage V
- 200
- Package Width
- 14(Max)
- Maximum Operating Temperature C
- 175
- Package Height
- 5.1(Max)
- Mounting
- Surface Mount
- Package Length
- 16.05(Max)
- Typical Rise Time Ns
- 30
- Eu Rohs
- Compliant with Exemption
- Typical Fall Time Ns
- 30
- Tab
- Tab
- Typical Turnon Delay Time Ns
- 28
- Tip
- Power MOSFET
- Channel Type
- N
- Category
- Power MOSFET
- Eccn Us
- EAR99
- Package Type
- TO-268
- Rad Hardened
- No
- Supplier Package
- TO-268
- Ppap
- No
- Typical Gate Charge10v Nc
- 145
- Power Dissipation
- 600(W)
- Pin Sayısı
- 3
- Hts
- 8541.21.00.95
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