IXFT86N30T

Specifications

Maximum Drain Source Voltage V

300

Typical Input Capacitance Vds Pf

11300@25V

Maximum Power Dissipation Mw

860000

Number Of Elements Per Chip

1

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Package Width

14(Max)

Pcb Changed

2

Configuration

Single

Typical Gate Charge Vgs Nc

180@10V

Maximum Drain Source Resistance Mohm

46@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

86

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

180

Ppap

No

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±20

Typical Turnoff Delay Time Ns

54

Pin Sayısı

3

Typical Turnon Delay Time Ns

16

Tab

Tab

Typical Fall Time Ns

15

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

18

Package Length

16.05(Max)

Mounting

Surface Mount

Supplier Package

TO-268

Category

Power MOSFET

Channel Type

N

Process Technology

HiperFET