IXFT70N30Q3

Specifications

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-268

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Process Technology

HiperFET

Typical Fall Time Ns

9

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

33

Tab

Tab

Mounting

Surface Mount

Typical Rise Time Ns

14

Package Length

16.05(Max)

Maximum Gate Source Voltage V

±20

Svhc

Yes

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

38

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

98

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

6

Pcb Changed

2

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

70

Typical Gate Charge Vgs Nc

98@10V

Maximum Drain Source Resistance Mohm

54@10V

Package Width

14(Max)

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

4735@25V

Maximum Power Dissipation Mw

830000

Number Of Elements Per Chip

1

Maximum Idss Ua

10

Maximum Drain Source Voltage V

300