IXFT69N30P

Specifications

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Package Width

14(Max)

Pd Power Dissipation

500 W

Kılıf / Paket

TO-268-3

Id Continuous Drain Current

69 A

Maximum Drain Source Voltage V

300

Maximum Power Dissipation Mw

500000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4960@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

49@10V

Typical Gate Charge Vgs Nc

156@10V

Maximum Continuous Drain Current A

69

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

2

Pin Sayısı

3

Typical Turnoff Delay Time Ns

75

Automotive

No

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±20

Typical Gate Charge10v Nc

156

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Rds On Drainsource Resistance

49 mOhms

Process Technology

HiperFET

Channel Type

N

Supplier Package

TO-268

Number Of Channels

1 Channel

Technology

Si

Eccn Us

EAR99

Category

Power MOSFET

Typical Rise Time Ns

25