IXFT58N20

Specifications

Vds Drainsource Breakdown Voltage

200 V

Typical Fall Time Ns

16

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

18

Tab

Tab

Mounting

Surface Mount

Typical Rise Time Ns

15

Package Length

16.05(Max)

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Supplier Package

TO-268

Number Of Channels

1 Channel

Channel Type

N

Rds On Drainsource Resistance

40 mOhms

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

190

Maximum Gate Source Voltage V

±20

Svhc

Yes

Automotive

No

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Parça Durumu

NRND

Typical Turnoff Delay Time Ns

72

Pin Sayısı

3

Pcb Changed

2

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

58

Minimum Operating Temperature

- 55 C

Maximum Drain Source Resistance Mohm

40@10V

Typical Gate Charge Vgs Nc

190@10V

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Typical Input Capacitance Vds Pf

4400@25V

Maximum Power Dissipation Mw

300000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

200