IXFT52N50P2

Specifications

Mounting

Surface Mount

Typical Rise Time Ns

10

Package Length

16.05(Max)

Typical Fall Time Ns

8

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

500 V

Tab

Tab

Typical Turnon Delay Time Ns

22

Rds On Drainsource Resistance

120 mOhms

Process Technology

HiperFET

Channel Type

N

Technology

Si

Eccn Us

EAR99

Category

Power MOSFET

Number Of Channels

1 Channel

Supplier Package

TO-268

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

113

Pin Sayısı

3

Typical Turnoff Delay Time Ns

46

Svhc

Yes

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Continuous Drain Current A

52

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

120@10V

Typical Gate Charge Vgs Nc

113@10V

Configuration

Single Dual Drain

Pcb Changed

2

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

960000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

6800@25V

Maximum Drain Source Voltage V

500

Maks. Çalışma Sıcaklığı

+ 150 C