IXFT50N60P3-TRL

Specifications

Qg Gate Charge

94 nC

Typical Turnoff Delay Time Ns

62

Pin Sayısı

3

Parça Durumu

Active

Automotive

No

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

94

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

3 V

Channel Type

N

Rds On Drainsource Resistance

160 mOhms

Number Of Channels

1 Channel

Supplier Package

TO-268

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Package Length

16.05(Max)

Typical Rise Time Ns

20

Mounting

Surface Mount

Typical Turnon Delay Time Ns

31

Tab

Tab

Vds Drainsource Breakdown Voltage

600 V

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

17

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Package Width

14(Max)

Kılıf / Paket

TO-268-3

Pd Power Dissipation

1.04 mW

Id Continuous Drain Current

50 A

Maximum Drain Source Voltage V

600

Typical Input Capacitance Vds Pf

6300@25V

Number Of Elements Per Chip

1

Ambalaj

Tape and Reel

Maximum Power Dissipation Mw

1040000

Montaj Stili

Through Hole

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

94@10V

Maximum Drain Source Resistance Mohm

160@10V