IXFT50N60P3

Specifications

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Mounting

Surface Mount

Typical Turnon Delay Time Ns

31

Typical Fall Time Ns

17

Pin Sayısı

3

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

50

Package Width

14(Max)

Kılıf / Paket

TO-268-3

Pd Power Dissipation

1.04 mW

Maximum Drain Source Voltage V

600

Montaj Stili

SMD/SMT

Channel Type

N

Process Technology

Polar3 HiperFET

Rds On Drainsource Resistance

145 mOhms

Number Of Channels

1 Channel

Supplier Package

TO-268

Typical Rise Time Ns

20

Package Length

16.05(Max)

Tab

Tab

Vds Drainsource Breakdown Voltage

600 V

Eu Rohs

Compliant with Exemption

Qg Gate Charge

94 nC

Typical Turnoff Delay Time Ns

62

Automotive

No

Typical Gate Charge10v Nc

94

Ppap

No

Vgs Th Gatesource Threshold Voltage

5 V

Maximum Drain Source Resistance Mohm

160@10V

Typical Gate Charge Vgs Nc

94@10V

Channel Mode

Enhancement