IXFT44N50Q3

Specifications

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Package Width

14(Max)

Maximum Idss Ua

25

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

4800@25V

Maximum Power Dissipation Mw

830000

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

6.5

Pcb Changed

2

Configuration

Single

Typical Gate Charge Vgs Nc

93@10V

Maximum Drain Source Resistance Mohm

140@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

44

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Typical Turnoff Delay Time Ns

37

Pin Sayısı

3

Typical Gate Charge10v Nc

93

Ppap

No

Supplier Package

TO-268

Category

Power MOSFET

Channel Type

N

Process Technology

HiperFET

Maximum Gate Source Leakage Current Na

100

Typical Turnon Delay Time Ns

30

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

9

Package Length

16.05(Max)

Typical Rise Time Ns

13

Mounting

Surface Mount