IXFT42N50P2

Specifications

Ppap

No

Typical Gate Charge10v Nc

92

Power Dissipation

830(W)

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

42

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Svhc

Yes

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Mounting

Surface Mount

Package Length

16.05(Max)

Typical Rise Time Ns

12

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

9

Typical Turnon Delay Time Ns

23

Tab

Tab

Channel Type

N

Process Technology

HiperFET

Tip

Power MOSFET

Category

Power MOSFET

Eccn Us

EAR99

Package Type

TO-268

Rad Hardened

No

Supplier Package

TO-268

Typical Input Capacitance Vds Pf

5300@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

830000

Maximum Drain Source Voltage V

500

Package Width

14(Max)

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Channel Mode

Enhancement

Maximum Continuous Drain Current A

42

Typical Gate Charge Vgs Nc

92@10V

Maximum Drain Source Resistance Mohm

145@10V

Operating Temp Range

-55C to 150C

Drainsource Onvolt

500(V)

Continuous Drain Current

42(A)