IXFT32N100XHV

Specifications

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Package Width

14(Max)

Seri

X-Class

Pd Power Dissipation

890 W

Kılıf / Paket

TO-268-3

Id Continuous Drain Current

32 A

Maximum Drain Source Voltage V

1000

Maximum Power Dissipation Mw

890000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4075@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

220@10V

Typical Gate Charge Vgs Nc

130@10V

Maximum Continuous Drain Current A

32

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

2

Pin Sayısı

3

Typical Turnoff Delay Time Ns

80

Qg Gate Charge

130 nC

Automotive

No

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

130

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Vgs Th Gatesource Threshold Voltage

3.5 V

Rds On Drainsource Resistance

220 mOhms

Channel Type

N

Number Of Channels

1 Channel

Supplier Package

TO-268HV

Category

Power MOSFET

Technology

Si