IXFT30N50Q3

Specifications

Kılıf / Paket

TO-268-3

Pd Power Dissipation

690 W

Id Continuous Drain Current

30 A

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Package Width

14(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

3200@25V

Maximum Power Dissipation Mw

690000

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Pcb Changed

2

Configuration

Single

Maximum Drain Source Resistance Mohm

200@10V

Typical Gate Charge Vgs Nc

62@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

30

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Svhc Exceeds Threshold

Yes

Svhc

Yes

Maximum Gate Source Voltage V

±20

Qg Gate Charge

62 nC

Typical Turnoff Delay Time Ns

26

Pin Sayısı

3

Vgs Th Gatesource Threshold Voltage

3.5 V

Typical Gate Charge10v Nc

62

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Number Of Channels

1 Channel

Supplier Package

TO-268

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Channel Type

N

Rds On Drainsource Resistance

200 mOhms