IXFT30N50P

Specifications

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Vgs Gatesource Voltage

- 30 V, + 30 V

Category

Power MOSFET

Technology

Si

Typical Turnon Delay Time Ns

25

Typical Fall Time Ns

24

Mounting

Surface Mount

Kılıf / Paket

TO-268-3

Pd Power Dissipation

460 W

Seri

IXFT30N50

Package Width

14(Max)

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

30

Automotive

No

Typical Turnoff Delay Time Ns

82

Qg Gate Charge

70 nC

Vgs Th Gatesource Threshold Voltage

3 V

Typical Gate Charge10v Nc

70

Ppap

No

Supplier Package

TO-268

Number Of Channels

1 Channel

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

200 mOhms

Tab

Tab

Vds Drainsource Breakdown Voltage

500 V

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

24

Package Length

16.05(Max)

Id Continuous Drain Current

30 A

Package Height

5.1(Max)

Maximum Operating Temperature C

150