IXFT26N60P

Specifications

Maximum Continuous Drain Current A

26

Minimum Operating Temperature

- 55 C

Minimum Operating Temperature C

-55

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

600

Pd Power Dissipation

460 W

Kılıf / Paket

TO-268-3

Package Width

14(Max)

Seri

IXFT26N60

Typical Fall Time Ns

21

Typical Turnon Delay Time Ns

25

Mounting

Surface Mount

Technology

Si

Eccn Us

EAR99

Category

Power MOSFET

Vgs Gatesource Voltage

- 30 V, + 30 V

Maximum Gate Source Voltage V

±30

Svhc

Yes

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Pin Sayısı

3

Configuration

Single

Pcb Changed

2

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

72@10V

Maximum Drain Source Resistance Mohm

270@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Power Dissipation Mw

460000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4150@25V

Id Continuous Drain Current

26 A

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

600 V

Tab

Tab

Package Length

16.05(Max)

Typical Rise Time Ns

27

Number Of Channels

1 Channel