IXFT24N90P

Specifications

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Mounting

Surface Mount

Typical Turnon Delay Time Ns

46

Typical Fall Time Ns

38

Pin Sayısı

3

Hts

8541.29.00.95

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Svhc

Yes

Maximum Gate Source Voltage V

±30

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

24

Seri

IXFT24N90

Package Width

14(Max)

Pd Power Dissipation

660 W

Kılıf / Paket

TO-268-3

Maximum Drain Source Voltage V

900

Montaj Stili

SMD/SMT

Rds On Drainsource Resistance

420 mOhms

Channel Type

N

Supplier Package

TO-268

Number Of Channels

1 Channel

Typical Rise Time Ns

40

Package Length

16.05(Max)

Tab

Tab

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

900 V

Typical Turnoff Delay Time Ns

68

Qg Gate Charge

130 nC

Automotive

No

Typical Gate Charge10v Nc

130

Ppap

No

Vgs Th Gatesource Threshold Voltage

6.5 V

Typical Gate Charge Vgs Nc

130@10V

Maximum Drain Source Resistance Mohm

420@10V