IXFT24N80P

Specifications

Svhc Exceeds Threshold

Yes

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Qg Gate Charge

100 nC

Typical Turnoff Delay Time Ns

75

Typical Gate Charge10v Nc

105

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Supplier Package

TO-268

Number Of Channels

1 Channel

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Rds On Drainsource Resistance

400 mOhms

Channel Type

N

Tab

Tab

Typical Turnon Delay Time Ns

32

Typical Fall Time Ns

24

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

800 V

Package Length

16.05(Max)

Typical Rise Time Ns

27

Mounting

Surface Mount

Pd Power Dissipation

650 W

Kılıf / Paket

TO-268-3

Id Continuous Drain Current

24 A

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Package Width

14(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

800

Maximum Power Dissipation Mw

650000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

7200@25V

Minimum Operating Temperature C

-55