IXFT220N20X3HV

Specifications

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Mounting

Surface Mount

Typical Fall Time Ns

17

Typical Turnon Delay Time Ns

37

Pin Sayısı

3

Hts

8541.29.00.95

Maximum Gate Source Voltage V

±20

Svhc

Yes

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Continuous Drain Current Id

220A

Vgs Gatesource Voltage

- 20 V, + 20 V

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

220

Minimum Operating Temperature

- 55 C

Package Width

14(Max)

Pd Power Dissipation

890 W

Kılıf / Paket

TO-268-3

Maximum Drain Source Voltage V

200

Montaj Stili

SMD/SMT

Rds On Drainsource Resistance

6.2 mOhms

Channel Type

N

Number Of Channels

1 Channel

Supplier Package

TO-268HV

Package Length

16.05(Max)

Typical Rise Time Ns

27

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

200 V

Tab

Tab

Power Dissipation

890W

Typical Turnoff Delay Time Ns

155

Qg Gate Charge

204 nC

Automotive

No

Ppap

No

Typical Gate Charge10v Nc

204

Vgs Th Gatesource Threshold Voltage

2.5 V

Channel Mode

Enhancement